Introduction

STMicroelectronics (ST) and Innoscience have signed a Joint Development Agreement (JDA) for gallium nitride (GaN) technology, aiming to collaboratively build a next-generation power electronics ecosystem targeting AI data centers, renewable energy generation and storage, automotive applications, and more. Under the agreement, Innoscience will leverage ST’s advanced manufacturing capacity in Europe, while ST will benefit from Innoscience’s local production resources in China. By integrating these resources, the two companies will establish a coordinated manufacturing network covering both European and Asian markets.

STMicroelectronics and Innoscience Sign GaN Technology Development and Manufacturing Agreement

On March 31, 2025, global semiconductor leader STMicroelectronics (NYSE: STM) and GaN manufacturing pioneer Innoscience (HKEX: 02577.HK) announced a strategic partnership to jointly develop high-performance GaN power technologies and share manufacturing capacity. Under the agreement, ST will utilize Innoscience’s 8-inch GaN-on-silicon production line in China to enhance its localized supply capabilities, while Innoscience will gain access to ST’s overseas front-end manufacturing facilities to expand its international footprint.

The collaboration aims to accelerate the adoption of GaN technology across a range of applications including consumer electronics, data centers, new energy vehicles (NEVs), and industrial power supplies. By combining their strengths, both companies seek to reinforce supply chain resilience and deliver a more competitive product portfolio.

Marco Cassis, President of STMicroelectronics' Analog, Power & Discrete, MEMS and Sensors Group, stated:  

“Both ST and Innoscience are vertically integrated device manufacturers (IDMs), and this collaboration will fully capitalize on the advantages of that model, benefiting customers worldwide. On one hand, ST will accelerate its GaN power technology roadmap to complement its existing silicon and silicon carbide product offerings; on the other hand, ST will serve global customers with a flexible manufacturing model.”

Dr. Luo Weiwei, Chairwoman and Founder of Innoscience, commented:  

“GaN technology is critical to enabling smaller, more efficient, lower-power, and cost-effective electronic systems with reduced carbon emissions. Innoscience was the first to mass-produce 8-inch GaN-on-silicon wafers, having shipped over one billion GaN devices across multiple markets. We’re thrilled to enter into this strategic partnership with ST. Together, we will expand and accelerate the adoption of GaN technology, with both teams jointly focused on developing the next generation of GaN innovation.”

GaN power devices are known for their low loss, high efficiency, and lightweight characteristics, significantly improving power conversion efficiency and reducing overall system costs. The technology is already widely used in fast chargers and server power supplies and is gradually being adopted in NEV powertrain systems. Over the next few years, ST and Innoscience plan to jointly advance next-gen GaN R&D, further solidifying their leading position in the power semiconductor sector.

About STMicroelectronics

STMicroelectronics employs over 50,000 semiconductor technology creators and makers, with advanced manufacturing capabilities spanning the entire semiconductor supply chain. As a vertically integrated device manufacturer, ST partners with over 200,000 customers and thousands of partners to co-develop products, solutions, and ecosystems that address technological challenges and market opportunities in support of sustainable development. ST’s technologies drive smart mobility, efficient power management, and large-scale deployment of connected, autonomous devices. The company aims to achieve carbon neutrality across Scope 1, 2, and key Scope 3 emissions (including product transport, business travel, and employee commuting) by the end of 2027, along with 100% renewable electricity usage.

About Innoscience

Innoscience (HKEX: 02577.HK) is a global leader in GaN process innovation and power device manufacturing. The company’s device designs and performance set industry benchmarks, while its culture of continuous innovation is accelerating GaN performance and market penetration. Innoscience’s GaN products span low, medium, and high voltage applications, covering process nodes from 15V to 1200V. With offerings including wafers, discrete devices, integrated power ICs, and modules, Innoscience delivers robust and reliable GaN solutions to customers. Backed by a portfolio of over 800 granted and pending patents, the company’s products serve markets such as consumer electronics, automotive, data centers, renewable energy, and industrial power—shaping a bright future for GaN technology.