Introduction
Recently, ChargerLAB got its hands on a new 100W fast charger from Philips. This charger supports a wide input voltage range of 100–240V AC and features two USB-C ports and one USB-A port. Both USB-C ports support up to 100W output power, while the USB-A port delivers up to 27W. It also supports a 65W + 27W power distribution strategy, meeting fast charging needs for laptops, tablets, smartphones, and more.
During a routine teardown of the Philips charger, it was found to incorporate the RX65T125HS2A, a 650V GaN MOSFET from RUNXIN Micro. Paired with the primary controller chip, this component helps manufacturers deliver a high-efficiency and safe charging experience for users.
Philips 100W GaN Charger

The product packaging is simple, including the charger, a 20V 5A black USB-C cable, and an instruction manual.

The charger has PHILIPS printed on the center of the front, and the shell is made of PC flame-retardant plastic. The plastic sheets of the two USB-C and the USB-A ports are all orange.
RUNXIN RX65T125HS2A

RUNXIN RX65T125HS2A, with a withstand voltage of 650V and a resistance of 125mΩ. The gate supports a withstand voltage of 20V. It complies with RoHS regulations, is halogen-free, and adopts the QFN8*8 package.

This device features low switching losses and is compatible with traditional silicon drivers, eliminating the need for a freewheeling diode, which effectively reduces the overall cost. It can be widely applied in various scenarios, including PD fast charging, communication equipment, automotive applications, and servo motors.
Summary of ChargerLAB
ChargerLAB has learned that the RUNXIN RX65T125HS2A, in line with the current trend of pursuing high efficiency and miniaturization in electronic devices, demonstrates significant application value. From performance and environmental friendliness to packaging, this component meets the design needs of modern GaN fast-charging products. Additionally, the RX65T125HS2A’s compatibility with traditional silicon switch drivers provides an advantage, allowing engineers to upgrade products without making significant changes to existing circuit designs, thereby reducing both R&D costs and time. Its lack of a freewheeling diode further simplifies circuit structures, reduces the number of components, and lowers usage costs, making the product more price-competitive while maintaining performance.
Runxin Microelectronics (Dalian) Co., Ltd. is a high-tech company under China Resources Microelectronics, specializing in leading global third-generation semiconductor technologies. Founded on March 17, 2016, by a returning overseas team in Dalian High-tech Zone, the company operates under an IDM (Integrated Device Manufacturer) business model, achieving large-scale production of GaN epitaxy, wafers, and devices with internationally leading technology. It truly realizes a fully controllable, self-sufficient industrial chain. The company’s products are primarily used in sectors such as power, electric motors, batteries, and cover various high-tech industries, including power management, solar inverters, new energy vehicles, and high-end motor drives.