AOS SiC Tech | Propelling AI Power to New Efficiency Heights

As AI computing power demand skyrockets, data center power systems are moving from silicon to next-gen semiconductors. At the 2026 World SiC Conference, AOS showcased its SiC power device lineup, which is redefining AI server power supplies and Solid-State Transformers (SST).

By tapping into the physical advantages of SiC—such as higher breakdown strength and thermal conductivity—AOS’s 650V–1200V series delivers a 3–4x smaller chip footprint and over 50% lower power loss.

This has been instrumental in transitioning data centers from 5.5kW single-phase PSUs to 30kW three-phase high-voltage architectures, supporting the next generation of high-density AI infrastructure.

AOS SiC technology excels in reliability and compatibility with complex power topologies. Its 1200V and 650V SiC MOSFETs provide a complete solution for PFC and LLC resonant stages.

Thanks to low Reverse Recovery Charge and Output Capacitance Charge, these devices minimize oscillation and maximize efficiency. For BBU and hot-swap circuits, AOS offers specialized JFET and lower RDS(on) options for efficient high-voltage DC conversion.

Additionally, with 1700V and 2300V series on the roadmap, AOS is moving toward 10kV SST solutions, enabling simplified, highly optimized data center power delivery.

Backed by global production capacity and stringent AEC-Q101 certification, AOS is solidifying its role as a power semiconductor leader. In 2026, the company will launch a new generation of 1200V SiC power modules, focusing on enhanced performance and durability.

As SiC tech migrates from PSUs to large-scale data center SSTs, AOS is leading the charge toward more efficient, compact, and intelligent data centers, powering the future of sustainable computing.