Teardown of Samsung 45W GaN Charger EP-T4510 (US Version)
We published an unboxing & compatibility test video of Samsung S22+ not long ago. And there is no charger in the box.
But Samsung released an additional 45W charger, which is also the first GaN charger made by Samsung. The model of GaN FET is GaN Systems GS-065-008-1-L.
GaN Systems was established in Ottawa, Canada in 2008, and its products are popular with customers in different industries. ChargerLAB also took apart the Apple 140W GaN charger in our YouTube channel and found out two GaN Systems chips are inside, which can further reflect the high-quality of GaN Systems’ products after being Apple’s supplier.
We've taken apart the Samsung 45W GaN Charger (CN Version). And today, we got the US version of this charger. Let's take a look at the differences in the internal components.
The packaging is as simple as ever, which is printed with the brand, charger name, and pics of the charger on the front.
And all specs info are printed on the back.
Open the box. It contains a charger and a charging cable.
It comes with a 5A cable and can support 100W.
The length of the cable is about 1.8m (5'10.9'').
The ChargerLAB POWER-Z KM001C shows the cable integrates E-Marker chip and can support 20V5A 100W.
We've published the teardown video of this cable on our YouTube channel.
The charger adopts black matte surface.
We can see the "Super Fast Charging" on the charger.
The model is EP-T4510.
It can support input of 100-240V~50/60HZ 1.2A.
And it also has four fixed PDOs of 5V3A, 9V3A, 15V3A, 20V2.25A, and a set of PPS protocols of 3.3-20V 2.25A (7.5-45W).
It also passed the UL certification.
It adopts fixed prongs (US Version).
And it's equipped with a USB-C port.
It's much smaller than the Apple 30W charger because of GaN technology.
That's how you hold it.
Weight is about 98g (3.46 oz).
And total weight is about 154.7g (5.46 oz).
The ChargerLAB POWER-Z KM002C shows it can support PD3.0 and PPS protocol.
It can be divided into four fixed PDOs (5V3A, 9V3A, 15V3A, 20V2.25A) and three PPS (3.3-11V5A, 3.3-16V3A, 3.3-21V2.25A).
After the brief introduction to its appearance, size, weight, performance, etc. Let's try to take it apart.
We can easily open it by prying along the gap of the top case.
We can not take out the internal module of the charger directly.
So, we have to use the cutting machine to open the shell.
The charger was filled with silicone adhesives for heat dissipation.
The PCB module is pasted with copper foil and insulating tape for heat dissipation.
The other side.
The bottom side.
Clean up the silicone adhesives. The copper foil is wrapped on PCB, helping dissipate heat.
There is a plastic cover at the input for insulation.
And the filter capacitors are inside.
The copper foil is soldered to PCB.
Remove the copper foil of the module, and we can see the front of the PCB module.
Back of the PCB module.
The width of the PCB module is 41.03mm (1.62inches).
The width of the PCB module is 37.36mm (1.47inches).
The thickness of the PCB module is 21.46mm (0.84inches).
Remove the transformer.
The primary and secondary circuits are isolated by an insulating plate.
Some components of primary circuits are under the transformer.
The input fuse comes from Better Electronics.
The first common mode choke is wrapped in an insulation tube.
The safety X capacitor can suppress the interference.
And the second common mode choke is the same as the first one.
The input rectifier bridge is under the transformer, which can convert AC to DC.
The model is RYBS4010.
Those two large capacitors come from CapXon, used for input filtering.
They're 15μF 400V.
There's another CapXon filter capacitor at the output.
There are multiple filter inductors on the back of the PCB.
And the master control chip comes from Dialog iW9801, a high-performance AC/DC primary-side digital flyback controller.
It can work with secondary-side regulation to achieve high power density and resolution in the output setting.
This tiny CapXon capacitor can power the master control chip.
This is the GaN FET from GaN Systems, which adopts the PDFN5*6 package.
The model is GS-065-008-1-L.
It's an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency.
Withstand voltage is 650V and resistance is 225mΩ.
Specs info of GaN Systems GS-065-008-1-L.
The BWUX2 MOSFET can work with transformer and be controlled by the protocol chip.
The primary coil of the transformer is made by PCB, which is a planar transformer, and the secondary coil adopts planar coil structure.
Close-up of the plastic insulating plate at the bottom of the transformer.
The white CT1018 optocoupler is here, used to regulate the output voltage.
Close-up of blue Y capacitor.
And the protocol chip comes from Dialog iW709.
It can support PD3.0, PPS, and QC4+ protocols.
It integrates synchronous rectifier controller and driver.
The external MOSFET can replace the traditional Schottky diode.
The synchronous rectifier comes from POTENS PDC85N11X-5 and adopts PPAK5*6 package. It can also work with protocol chip for rectification.
Those two solid output capacitors come from Capxon PF series and are connected in parallel.
And the output VBUS MOSFET comes from Winning Team SFTN7422SMP and adopts DFN3030 package.
Finally, the USB-C socket is vertically welded on PCB and protected by a plastic case.
OK, that’s all for the Teardown of the Samsung 45W GaN charger. Let’s take a “family portrait.”
Summary of ChargerLAB
After taking it apart, we also found many silicone adhesives inside the charger. And the copper foil can also enhance heat dissipation performance. The GaN FET from GaN Systems and the planar transformer can obviously reduce the size compared to the previous generation.
This is the first GaN charger from Samsung. As we all know, the Galaxy S22 can support 25W super-fast charging.
The S22 Ultra and S22+ can support 45W super-fast charging. So, this charger is more suitable for S22 Ultra and S22+.
So if you're a Samsung S22 series user, this new model is definitely better than the old one.