Introduction

The low-voltage GaN integrated driver chip is a chip that integrates enhancement-mode low-voltage silicon-based gallium nitride transistors and single-channel high-speed drivers. It features a small size, high power density, high efficiency, high switching frequency, low on-resistance, and zero reverse recovery loss. It is commonly used in PD fast charging, motor driving, Class-D audio amplification, miniature inverters, communication devices, and other consumer and industrial applications.

Recently, ChargerLAB learned that DanXi has launched a brand-new GaN PIIP gallium nitride chip. This chip integrates a GaN HEMT and a gallium nitride gate driver, which can reduce parasitic parameters and improve the overall system efficiency. Currently, this chip has been successfully introduced into the supply chain of Jimeng beauty devices, helping the product achieve stable and efficient ultrasonic high-frequency energy output.

DanXi DXC3510S2CA

DanXi Technology Launches 100V Low-Voltage GaN Chip with Built-In Driver-Chargerlab

DanXi Technology’s DXC3510S2CA is a 100V GaN PIIP that integrates a 100V-rated, 12 mΩ R_DS(on) E-mode GaN HEMT and a gallium nitride gate driver. It is specifically optimized for efficient, high-density power supply designs. The device features a wide input voltage tolerance range from 0 to 20V, enabling it to adapt to complex voltage fluctuation environments, and supports ultra-high switching frequencies, significantly enhancing system power density and response speed.

DanXi Technology Launches 100V Low-Voltage GaN Chip with Built-In Driver-Chargerlab

Thanks to the inherent advantages of GaN material, the DXC3510S2CA can achieve fast and controllable rise times, optimizing switching losses and improving energy efficiency. In addition, its zero reverse recovery loss characteristic completely eliminates the energy waste issues found in traditional silicon-based devices during the freewheeling process. This makes it especially suitable for applications such as high-frequency switching power supplies, synchronous rectification, high-frequency DC-DC converters, motor drives, Class-D audio amplifiers, and wireless power transmission devices.

Summary of ChargerLAB

DanXi’s DXC3510S2CA chip, thanks to its high integration and high-frequency switching characteristics, effectively simplifies peripheral circuits and reduces costs. Compared to traditional low-voltage MOS solutions, the DXC3510S2CA offers lower switching losses, better temperature rise performance, reduced cooling requirements, minimized parasitic inductance, optimized switching noise, and improved reliability. It is truly an ideal choice for compact consumer electronics products pursuing high efficiency and high performance.

Since its establishment, DanXi Technology has been dedicated to the research, development, and sales of a comprehensive range of gallium nitride (GaN) products. With a focus on new energy and the country’s advanced foundational industries, the company aims to build a fully domestic GaN product line. DanXi has set up R&D and marketing centers in Chengdu and Shenzhen, providing high-performance and highly reliable solutions to customers across various application fields.

DanXi Technology always regards scientific research capability as its cornerstone, breaking the monopoly of international manufacturers in the GaN field. The company has successively launched four major product lines: E-mode GaN HEMT, GaN Drivers, GaN PIIP® (Power Integrated In Package), and PWM GaN, which are widely used in consumer electronics, data centers, lithium batteries, and new energy vehicles.