Introduction

On April 10, OPPO launched a highly distinctive 100W SUPERVOOC GaN Charger. The product features a unique and recognizable design and supports both OPPO’s 100W SUPERVOOC fast charging and 65W PD fast charging, meeting the fast charging needs of the new OPPO Find X8 series and laptops. Additionally, it supports 44W UFCS fusion fast charging, further enhancing its compatibility with a wider range of devices from various brands.

According to the teardown, the charger incorporates a GaN FET INN700DA190B from Innoscience on the primary side, enabling the compact device to deliver up to 100W of high power output.

OPPO 100W SUPERVOOC GaN Charger

Innoscience INN700DA190B Adopted in OPPO 100W SUPERVOOC GaN Charger-Chargerlab

The box contains the OPPO 100W SUPERVOOC GaN Charger and a cable that supports magnetic self-winding.

Innoscience INN700DA190B Adopted in OPPO 100W SUPERVOOC GaN Charger-Chargerlab

The matte surface of its shell is anti-fingerprint, and it is very compact and portable. It is equipped with a foldable plug.

After a brief look at the exterior, let's move on to introduce the built-in Innoscience INN700DA190B.

Innoscience INN700DA190B

Innoscience INN700DA190B Adopted in OPPO 100W SUPERVOOC GaN Charger-Chargerlab

The built-in GaN FET is from Innoscience, model INN700DA190B. It is an enhancement-mode GaN FET with a voltage rating of 700V and an on-resistance of 190mΩ. Designed to meet JEDEC standards for industrial applications, it also features built-in ESD protection and comes in a compact DFN5×6 package.

Innoscience INN700DA190B Adopted in OPPO 100W SUPERVOOC GaN Charger-Chargerlab

The INN700DA190B also features high switching frequency, zero reverse recovery charge, and low gate charge characteristics. It complies with RoHS, lead-free, and REACH standards, making it ideal for applications such as PD fast chargers, laptop adapters, all-in-one (AIO) adapters, PC ATX power supplies, flat-screen TVs, and power supplies for electric tools.

Innoscience GaN chips have already been adopted by numerous well-known brands and manufacturers, including Samsung, OPPO, VIVO, Lenovo, Yadea, LG, ASUS, Anker, Nubia, Baseus, UGREEN, and Sharge, with cumulative shipments exceeding 1 billion units.

Summary of ChargerLAB

Thanks to its 700V voltage tolerance, 190mΩ on-resistance, and high switching frequency, the Innoscience INN700DA190B GaN FET plays a key role in enabling the OPPO 100W SUPERVOOC GaN Charger to deliver both compact size and high power output, performing exceptionally well in daily use. With over 1 billion units shipped, Innoscience GaN devices have been widely adopted by numerous leading brands, highlighting their strong market presence and promising prospects.

Innoscience is a global leader in third-generation semiconductor technology, specializing in the research, development, and manufacturing of GaN-on-Si (Gallium Nitride on Silicon) solutions. The company operates the world’s largest 8-inch GaN-on-Si wafer production facility, with product design and performance ranking among the most advanced globally. Innoscience’s GaN portfolio spans a wide voltage range from 15V to 1200V, covering wafers, discrete devices, ICs, and modules, offering customers complete GaN-based solutions. Since its founding, Innoscience has secured nearly 700 patents and patent applications, with its products serving a wide array of cutting-edge applications in consumer electronics, renewable energy and industrial sectors, automotive electronics, and data centers.