Introduction

Anker has launched a desktop fast-charging power strip in the Japanese market, model A91B2. This product is equipped with two AC outlets and a total of six USB ports, with four USB-C ports supporting 140W PD3.1 fast charging. The total output power reaches up to 240W. Additionally, this product innovatively integrates both AC and DC power supplies into the included power module, making its design distinct from similar products on the market.

During a recent teardown of this product, it was discovered that it contains a GaN power device, the G1N65R092TA-H from GaNext, which is used in the PFC circuit. The following will provide a detailed introduction to this component.

Anker 8-in-1 240W Prime Charging Station

GaNext Enters Anker Supply Chain with G1N65R092TA-Chargerlab

The Anker 8-in-1 240W Prime Charging Station (A91B2) package includes the charging station, instruction manual, warranty card, and Anker 253W power adapter.

GaNext Enters Anker Supply Chain with G1N65R092TA-Chargerlab

This power adapter has a simple design and comes with a DC output cable at the output end, but it has a special plug and is not universal.

After taking a quick look at the product's appearance, let's introduce its built-in GaNext G1N65R092TA-H.

GaNext G1N65R092TA-H

The PFC boost MOSFET in Anker's power adapter is equipped with the GaNext G1N65R092TA-H. It has a withstand voltage of 650V, a resistance of 92mΩ, and is packaged in TO-220.

GaNext Enters Anker Supply Chain with G1N65R092TA-Chargerlab

The GaNext G1N65 series is a hybrid normally-off GaN field-effect transistor (FET). Devices in this series are easy to drive, with a high threshold voltage and no need for negative gate drive, making them compatible with Si MOSFET drivers. Additionally, these devices offer fast switching speed, low drive power consumption, and low forward voltage drop. With excellent performance and reliability, they are well-suited for various circuit designs and applications, including PFC (Power Factor Correction) and half-bridge LLC topologies.

Summary of ChargerLAB

The GaNext G1N65R092TA-H ensures efficient and stable output. It has a withstand voltage of 650V, a resistance of 92mΩ, and adopts the TO-220 package. This device features fast switching, low loss, and high reliability, which simplifies the design of the PFC circuit. With no need for negative gate drive, its application in the PFC circuit of this product significantly enhances the system's efficiency and stability, meeting Anker's custom design requirements.

Zhuhai GaNext Technology Co., Ltd. is an industry-leading high-voltage GaN power device high-tech enterprise, focused on the research and industrialization of third-generation semiconductor GaN-on-Si (Gallium Nitride on Silicon) devices. It was the first in China to achieve mass production of GaN devices across the full power range. The products developed by the company offer advantages such as ease of use (compatible with Si MOSFET drivers), high reliability, and leading performance parameters. The product lineup includes a full range of packaging types, including surface-mount packages such as PQFN, DFN, TOLL, TOLT, TO-252-3L/4L, and through-hole packages like TO-220(F), TO-247-3L/4L. These next-generation power devices are efficient, energy-saving, and environmentally friendly.